Infineon · FETs & Power MOSFETs · MPN IPN60R1K0PFD7S
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 230pF |
3A 3.5V 6W 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS