Infineon IPN60R1K0CE

Infineon · FETs & Power MOSFETs · MPN IPN60R1K0CE

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)21pF
Current - Continuous Drain(Id)6.8A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation5W
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)280pF
TypeN-Channel

Technical details

N-Channel 600V 6.8A 5W Surface Mount SOT-223

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