Infineon · FETs & Power MOSFETs · MPN IPN50R950CE
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 6.6A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| RDS(on) | 950mΩ@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 231pF |
550V 6.6A 3V 5W 950mΩ@13V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS