Infineon · FETs & Power MOSFETs · MPN IPN50R3K0CEATMA1
No reviews yet — be the first to review Infineon IPN50R3K0CEATMA1.
| Drain to Source Voltage | 550V |
|---|---|
| Gate Charge(Qg) | 4.3nC@10V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 3Ω@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 84pF |
N-Channel 550V 2.6A 5W Surface Mount SOT-223