Infineon · FETs & Power MOSFETs · MPN IPN50R2K0CEATMA1
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 5W |
| RDS(on) | 2Ω@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 124pF |
| Type | N-Channel |
500V 3.6A 3.5V 5W 2Ω@13V 1 N-channel N-Channel SOT-223-3 Single FETs, MOSFETs RoHS