Infineon · FETs & Power MOSFETs · MPN IPN50R1K4CE
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| Gate Charge(Qg) | 8.2nC@13V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.4Ω@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 178pF |
550V 4.8A 3.5V 5W 1.4Ω@13V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS