Infineon · FETs & Power MOSFETs · MPN IPM018N10NM5LF2AUMA1
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| Output Capacitance(Coss) | 1.6nF |
|---|---|
| Pd - Power Dissipation | 349W |
| Configuration | - |
| Gate Charge(Qg) | 142nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.15V |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 1.4mΩ@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
349W 100V 3.15V 1.4mΩ@15V 1 N-channel N-Channel PG-HSOG-4-1 Single FETs, MOSFETs RoHS