Infineon IPLK80R900P7

Infineon · FETs & Power MOSFETs · MPN IPLK80R900P7

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)15nC
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation54W
RDS(on)770mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF

Technical details

800V 6A 3V 54W 770mΩ@10V 1 N-channel ThinPAK5x6 Single FETs, MOSFETs RoHS

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