Infineon IPLK70R900P7ATMA1

Infineon · FETs & Power MOSFETs · MPN IPLK70R900P7ATMA1

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Specifications

Gate Charge(Qg)6.8nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)5pF
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation32.1W
Reverse Transfer Capacitance (Crss@Vds)177pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)211pF

Technical details

N-Channel 700V 5.7A 32.1W Surface Mount TDSON-8

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