Infineon IPLK70R600P7ATMA1

Infineon · FETs & Power MOSFETs · MPN IPLK70R600P7ATMA1

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Specifications

Gate Charge(Qg)10.5nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)7pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation46.3W
RDS(on)490mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)364pF
TypeN-Channel

Technical details

N-Channel 600V 70A Surface Mount TDSON-8

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