Infineon · FETs & Power MOSFETs · MPN IPLK60R1K5PFD7
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.23Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 169pF |
600V 3.8A 4V 25W 1.23Ω@10V 1 N-channel ThinPAK(5x6) Single FETs, MOSFETs RoHS