Infineon · FETs & Power MOSFETs · MPN IPLK60R1K0PFD7
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 31.3W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 840mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 230pF |
600V 5.2A 4V 31.3W 840mΩ@10V 1 N-channel ThinPAK(5x6) Single FETs, MOSFETs RoHS