Infineon · FETs & Power MOSFETs · MPN IPL65R210CFD
No reviews yet — be the first to review Infineon IPL65R210CFD.
| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 16.6A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 151W |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.85nF |
650V 16.6A 151W 210mΩ@10V 1 N-channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS