Infineon · FETs & Power MOSFETs · MPN IPL65R1K5C6SE8211ATMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 11nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 18pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 225pF |
650V 3A 3.5V 30W 1.5Ω@10V 1 N-channel Single FETs, MOSFETs RoHS