Infineon IPL65R1K5C6S

Infineon · FETs & Power MOSFETs · MPN IPL65R1K5C6S

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Specifications

Drain to Source Voltage650V
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation26.6W
RDS(on)1.5Ω@10V
Number1 N-channel

Technical details

650V 3A 3.5V 26.6W 1.5Ω@10V 1 N-channel TSON-8 Single FETs, MOSFETs RoHS

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