Infineon · FETs & Power MOSFETs · MPN IPL65R195C7
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 195mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
N-Channel 650V 8A 75W Surface Mount VSON-4(8x8)