Infineon IPL65R165CFD

Infineon · FETs & Power MOSFETs · MPN IPL65R165CFD

No reviews yet — be the first to review Infineon IPL65R165CFD.

Specifications

Gate Charge(Qg)86nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)13.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation195W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)165mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.34nF

Technical details

650V 13.5A 4V 195W 165mΩ@10V 1 N-channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs