Infineon · FETs & Power MOSFETs · MPN IPL65R099C7
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 128W |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.14nF |
650V 15A 3.5V 128W 99mΩ@10V 1 N-channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS