Infineon · FETs & Power MOSFETs · MPN IPL60R650P6S
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 56.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 650mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 557pF |
| Type | - |
600V 6.7A 4.5V 56.8W 650mΩ@10V 1 N-channel ThinPAK(5x6) Single FETs, MOSFETs RoHS