Infineon IPL60R285P7

Infineon · FETs & Power MOSFETs · MPN IPL60R285P7

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)13A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation59W
RDS(on)285mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)761pF

Technical details

N-Channel 600V 13A 59W Surface Mount VSON-4-EP(8.1x8.1)

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