Infineon · FETs & Power MOSFETs · MPN IPL60R210P6
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| Gate Charge(Qg) | 37nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 12.1A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 151W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.75nF |
600V 12.1A 4.5V 151W 210mΩ@10V 1 N-channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS