Infineon · FETs & Power MOSFETs · MPN IPL60R199CP
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 16.4A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 199mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.52nF |
600V 16.4A 3.5V 139W 199mΩ@10V 1 N-channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS