Infineon IPL60R115CFD7

Infineon · FETs & Power MOSFETs · MPN IPL60R115CFD7

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)14A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation124W
Reverse Transfer Capacitance (Crss@Vds)616pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.752nF

Technical details

N-Channel 650V 14A 124W Surface Mount VSON-4-EP(8.1x8.1)

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