Infineon IPL60R105P7AUMA1

Infineon · FETs & Power MOSFETs · MPN IPL60R105P7AUMA1

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)21A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation137W
Reverse Transfer Capacitance (Crss@Vds)646pF
RDS(on)105mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.952nF

Technical details

N-Channel 600V 21A 137W Surface Mount VSON-4

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