Infineon IPL60R065P7

Infineon · FETs & Power MOSFETs · MPN IPL60R065P7

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)32A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation201W
Reverse Transfer Capacitance (Crss@Vds)924pF
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.895nF

Technical details

N-Channel 650V 32A 201W Surface Mount VSON-4-EP(8.1x8.1)

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