Infineon IPL60R065C7

Infineon · FETs & Power MOSFETs · MPN IPL60R065C7

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Specifications

Gate Charge(Qg)68nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)51A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.85nF

Technical details

650V 51A 3.5V 180W 65mΩ@10V 1 N-channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS

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