Infineon · FETs & Power MOSFETs · MPN IPI90R1K2C3
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 5.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 710pF |
900V 5.1A 3V 83W 1.2Ω@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS