Infineon IPI90R1K0C3

Infineon · FETs & Power MOSFETs · MPN IPI90R1K0C3

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

900V 5.7A 3.5V 89W 1Ω@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS

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