Infineon IPI80N06S2-08

Infineon · FETs & Power MOSFETs · MPN IPI80N06S2-08

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage55V
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation215W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number-
Input Capacitance(Ciss)-

Technical details

55V 80A 4V 215W TO-262-3 Single FETs, MOSFETs RoHS

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