Infineon IPI80N04S4-03

Infineon · FETs & Power MOSFETs · MPN IPI80N04S4-03

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.26nF

Technical details

40V 80A 4V 94W 3.3mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS

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