Infineon IPI80N04S3-04

Infineon · FETs & Power MOSFETs · MPN IPI80N04S3-04

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.4nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
RDS(on)3.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)250pF
Input Capacitance(Ciss)5.2nF
TypeN-Channel

Technical details

40V 80A 4V 136W 3.8mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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