Infineon IPI70N04S4-06

Infineon · FETs & Power MOSFETs · MPN IPI70N04S4-06

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)640pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.55nF
TypeN-Channel

Technical details

N-Channel 40V 70A 58W Through Hole TO-262-3

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