Infineon · FETs & Power MOSFETs · MPN IPI65R420CFD
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 31.5nC@10V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 8.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 83.3W |
| RDS(on) | 420mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
650V 8.7A 4.5V 83.3W 420mΩ@10V 1 N-channel TO-262-3-1 Single FETs, MOSFETs RoHS