Infineon · FETs & Power MOSFETs · MPN IPI65R190C
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 86pF |
| Current - Continuous Drain(Id) | 17.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 151W |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.85nF |
650V 17.5A 4.5V 151W 190mΩ@10V 1 N-channel TO-262-3-1 Single FETs, MOSFETs RoHS