Infineon · FETs & Power MOSFETs · MPN IPI65R150CFD
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 86nC@10V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 22.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 195.3W |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.34nF |
650V 22.4A 4.5V 195.3W 150mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS