Infineon · FETs & Power MOSFETs · MPN IPI65R099C6
No reviews yet — be the first to review Infineon IPI65R099C6.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 127nC@10V |
| Output Capacitance(Coss) | 142pF |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 525pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.78nF |
650V 38A 3.5V 278W 99mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS