Infineon · FETs & Power MOSFETs · MPN IPI600N25N3 G
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| Drain to Source Voltage | 250V |
|---|---|
| Current - Continuous Drain(Id) | 25A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
250V 25A 4V 136W 60mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS