Infineon · FETs & Power MOSFETs · MPN IPI50R350CP
No reviews yet — be the first to review Infineon IPI50R350CP.
| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.02nF |
550V 10A 3.5V 89W 350mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS