Infineon IPI50R250CP

Infineon · FETs & Power MOSFETs · MPN IPI50R250CP

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)63pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation114W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.42nF
TypeN-Channel

Technical details

500V 13A 3.5V 114W 250mΩ@10V 1 N-channel N-Channel TO-262-3-1 Single FETs, MOSFETs RoHS

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