Infineon IPI45N06S4-09

Infineon · FETs & Power MOSFETs · MPN IPI45N06S4-09

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)9.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.785nF

Technical details

60V 45A 71W 9.4mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS

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