Infineon · FETs & Power MOSFETs · MPN IPI200N25N3 G
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
250V 4V 300W 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS