Infineon IPI180N10N3 G

Infineon · FETs & Power MOSFETs · MPN IPI180N10N3 G

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)43A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation71W
RDS(on)18mΩ@10V
Number1 N-channel

Technical details

100V 43A 3.5V 71W 18mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS

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