Infineon IPI120N10S403AKSA1

Infineon · FETs & Power MOSFETs · MPN IPI120N10S403AKSA1

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Specifications

Gate Charge(Qg)140nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)3.2nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.12nF
TypeN-Channel

Technical details

100V 120A 3.5V 250W 3.5mΩ@10V 1 N-channel N-Channel TO-262-3-1 Single FETs, MOSFETs RoHS

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