Infineon IPI120N04S4-02

Infineon · FETs & Power MOSFETs · MPN IPI120N04S4-02

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Specifications

Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation158W
RDS(on)2.1mΩ@10V
Number1 N-channel

Technical details

40V 120A 4V 158W 2.1mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS

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