Infineon IPI120N04S4-01

Infineon · FETs & Power MOSFETs · MPN IPI120N04S4-01

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number-
Input Capacitance(Ciss)-

Technical details

40V 120A 188W TO-262-3 Single FETs, MOSFETs RoHS

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