Infineon · FETs & Power MOSFETs · MPN IPI100N04S3-03
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| Gate Charge(Qg) | 145nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 2.6nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 214W |
| RDS(on) | 2.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF |
| Input Capacitance(Ciss) | 9.6nF |
| Type | N-Channel |
40V 100A 4V 214W 2.5mΩ@10V N-Channel Single FETs, MOSFETs RoHS