Infineon · FETs & Power MOSFETs · MPN IPI086N10N3 G
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.99nF |
N-Channel 100V 80A 125W Through Hole TO-262-3