Infineon · FETs & Power MOSFETs · MPN IPI076N15N5
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| Gate Charge(Qg) | 61nC@75V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 112A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.6V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 7.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.7nF |
150V 112A 4.6V 214W 7.6mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS