Infineon · FETs & Power MOSFETs · MPN IPI052NE7N3G
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| Drain to Source Voltage | 75V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Output Capacitance(Coss) | 1.07nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.75nF |
75V 80A 3.8V 150W 5.2mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS