Infineon · FETs & Power MOSFETs · MPN IPI045N10N3 G
No reviews yet — be the first to review Infineon IPI045N10N3 G.
| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.21nF |
| Current - Continuous Drain(Id) | 137A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.32nF |
| Type | N-Channel |
N-Channel 100V 214W Through Hole TO-262-3